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2N5401 Transistor

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GH¢ 0.50
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    2N5401 Transistor

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    GH¢ 0.50 0.5 GHS GH¢ 0.50

    ₦ 80.00

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    The 2N5401 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is capable of handling medium power levels and features a high voltage rating, making it suitable for a variety of electronic circuits, including audio amplifiers, signal processing, and power management. Key Features:
    • Type: PNP Bipolar Junction Transistor (BJT)
    • High Voltage: Capable of withstanding high voltage levels
    • Medium Power Handling: Suitable for medium power applications
    • Good Frequency Response: Effective for amplification and signal processing
    • Compact Package: Available in a TO-92 package for easy integration
    Technical Specifications:
    • Collector-Emitter Voltage (Vce): -150V
    • Collector-Base Voltage (Vcb): -160V
    • Emitter-Base Voltage (Veb): -5V
    • Collector Current (Ic): -600mA
    • Power Dissipation (Ptot): 625mW
    • DC Current Gain (hFE): 30 to 240
    • Transition Frequency (ft): 50MHz
    • Package Type: TO-92
    Applications:
    • Signal Amplification: Used in medium-power amplification circuits
    • Switching Applications: Suitable for medium-power switching applications
    • Audio Frequency Circuits: Ideal for audio amplification and signal processing
    • Power Management: Used in power management and regulation circuits
    • General Purpose: Commonly used in various general-purpose electronic circuits
    Usage:
    1. Circuit Design: Integrate the 2N5401 transistor into your circuit design based on the required application.
    2. Biasing: Properly bias the transistor for optimal performance in amplification or switching.
    3. Connection: Connect the collector, base, and emitter terminals appropriately in the circuit.
    4. Testing: Test the circuit to ensure the transistor is functioning as expected in the desired application.
    Caution:
    • Voltage and Current Limits: Do not exceed the maximum voltage and current ratings to prevent damage.
    • Heat Dissipation: Ensure adequate heat dissipation to avoid overheating, especially in medium-power applications.
    • Static Electricity: Handle with care to avoid damage from electrostatic discharge (ESD).
    Datasheet: For detailed technical specifications, refer to the 2N5401 Transistor Datasheet.
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