The IRF630 is an N-channel power MOSFET designed for high-voltage and moderate-current applications. It provides efficient switching and is ideal for use in power supplies, motor control circuits, and various high-power electronic applications.
Key Features:
- N-channel enhancement mode MOSFET
- High voltage rating: 200V
- Moderate current rating: 9.3A
- Low on-resistance for efficient switching
- Fast switching capabilities
- Rugged and reliable construction
- Suitable for high-frequency applications
- Type: N-channel MOSFET
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 9.3A
- Pulsed Drain Current (Id, Pulse): 37A
- Gate-Source Voltage (Vgs): ±20V
- Rds(on): 0.4Ω (maximum) at Vgs = 10V
- Total Gate Charge (Qg): 38nC (typical)
- Gate-Source Threshold Voltage (Vgs(th)): 2.0V - 4.0V
- Power Dissipation (Pd): 74W
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
- Switched-mode power supplies (SMPS)
- Motor control circuits
- DC-DC converters
- Inverters and amplifiers
- Load switches
- Automotive electronics
- Power management systems
- Connect the drain terminal to the load or power supply.
- Connect the source terminal to the ground or low-side of the circuit.
- Apply a suitable gate voltage (Vgs) to control the switching operation.
- Use a gate resistor if needed to manage switching speed and reduce noise.
- Ensure proper heat sinking to handle power dissipation and prevent overheating.
- Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
- Verify the voltage and current ratings to ensure compatibility with your circuit.
- Ensure adequate cooling and heat dissipation to prevent thermal overload.
No Specifications