18N50 FET

Description: The 18N50 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power switching applications. It features low on-state resistance (R_DS(on)) and high current handling capability, making it suitable for use in power supplies, motor control, and other high current switching circuits. This FET operates efficiently with low gate drive requirements, providing reliable performance in various industrial and consumer electronics applications. Key Features:

• N-channel MOSFET
• Drain-Source Voltage (V_DSS): 500V
• Continuous Drain Current (I_D): 18A
• Low on-state resistance (R_DS(on))
• Fast switching speed
• Low gate drive voltage
• RoHS compliant

Technical Specifications:

• Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_G): Typically 80nC
• Operating Temperature Range: -55°C to +150°C
• Package Type: TO-220

Applications:

• Power supplies
• Motor control
• DC-DC converters
• Inverters
• Switching regulators

Datasheet: For detailed technical information, refer to the 18N50 FET Datasheet.