STP65NF06
The STP65NF06 is an N-channel MOSFET designed for high efficiency and fast switching applications. It is well-suited for a wide range of applications due to its low gate charge, low on-resistance, and high current handling capabilities.
Key Features:
- N-channel enhancement mode MOSFET
- Low gate charge (Qg)
- Low on-resistance (Rds(on)): 0.014 ohms (max) at Vgs = 10V
- High current capability: 60A (continuous)
- High avalanche ruggedness
- Fast switching
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 60A
- Pulsed Drain Current (Id, pulse): 240A
- Gate-Source Voltage (Vgs): ±20V
- Total Gate Charge (Qg): 70nC (typical)
- Gate Threshold Voltage (Vgs(th)): 2-4V
- Power Dissipation (Pd): 110W
- Operating Temperature Range: -55°C to 175°C
- DC-DC converters
- Motor control
- Power management in portable and battery-operated devices
- Switch-mode power supplies (SMPS)
- Load switch applications
No Specifications