2N2905A temperature sensitive sensor

Description: The 2N2905A is a PNP silicon transistor designed for general-purpose switching and amplification applications. While it is not specifically a temperature-sensitive sensor like a dedicated temperature sensor IC, bipolar junction transistors like the 2N2905A can exhibit changes in characteristics such as voltage drop with changes in temperature, which can be utilized in temperature measurement circuits. Key Features:

• PNP silicon transistor
• Medium power switching and amplifier applications
• High current gain (hFE) typically ranging from 100 to 300
• Low saturation voltage
• Complementary type to the 2N2907A NPN transistor

Technical Specifications:

• Package Type: TO-39
• Maximum Collector-Base Voltage: -60V
• Maximum Collector-Emitter Voltage: -40V
• Maximum Emitter-Base Voltage: -5V
• Continuous Collector Current: -600mA
• Power Dissipation: 625mW

Applications:

• Switching Circuits: Used in general-purpose switching applications.
• Amplification: Amplifies weak signals in various electronic circuits.
• Temperature Measurement: Can be used in temperature-sensitive circuits where changes in base-emitter voltage (Vbe) due to temperature changes are utilized for temperature measurement.

Datasheet: For detailed technical information, refer to the 2N2905A Datasheet. Category: Bipolar Junction Transistors