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3N80 switching power supply FET

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GH¢ 7.00
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    3N80 switching power supply FET
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    3. 3N80 switching power supply FET
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    3N80 switching power supply FET

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    GH¢ 7.00 7.0 GHS GH¢ 7.00

    ₦ 1,200.00

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    The 3N80 is an N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications in power supplies and converters. With a high voltage rating and low on-resistance, this FET is suitable for use in various power management applications, providing reliable and efficient performance. Key Features:
    • High Voltage Capability: 800V drain-source voltage (V_DS)
    • Current Handling: 3A continuous drain current (I_D)
    • Low On-Resistance: R_DS(on) of 4.5Ω for efficient switching
    • Fast Switching: Quick transition times for improved performance
    • Thermal Performance: Robust package for efficient heat dissipation
    • Safe Operating Area: Wide range of safe operating conditions
    Technical Specifications:
    • Drain-Source Voltage (V_DS): 800V
    • Continuous Drain Current (I_D): 3A
    • Pulsed Drain Current (I_DM): 12A
    • Gate-Source Voltage (V_GS): ±30V
    • On-Resistance (R_DS(on)): 4.5Ω
    • Total Gate Charge (Q_g): 27nC
    • Gate Threshold Voltage (V_GS(th)): 3V (max)
    • Power Dissipation (P_D): 60W
    • Operating Temperature Range: -55°C to +150°C
    • Package: TO-220
    • Weight: 2 grams
    Applications:
    • Switching power supplies
    • DC-DC converters
    • Motor control circuits
    • High voltage lighting systems
    • Industrial power management
    • Consumer electronics
    Usage:
    1. Circuit Integration: Connect the FET in your circuit as per the design requirements, ensuring proper orientation of the gate, drain, and source terminals.
    2. Gate Drive: Use an appropriate gate drive voltage (typically 10V to 15V) to fully turn on the MOSFET and achieve low on-resistance.
    3. Thermal Management: Implement proper heat sinking or cooling to manage thermal dissipation and maintain optimal performance.
    4. Load Control: Utilize the MOSFET to control high voltage loads, ensuring that the current and voltage ratings are within specified limits.
    5. Switching: Take advantage of the fast switching characteristics to improve the efficiency of power conversion and control applications.
    Caution:
    • Ensure the MOSFET is operated within its specified voltage and current limits to avoid damage.
    • Handle with care to prevent electrostatic discharge (ESD) damage.
    • Implement proper thermal management to avoid overheating.
    Datasheet: For more detailed technical information, refer to the 3N80 Datasheet.
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