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IRF9510 P Channel FET

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GH¢ 10.00
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    IRF9510 P Channel FET
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    IRF9510 P Channel FET

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    GH¢ 10.00 10.0 GHS GH¢ 10.00

    ₦ 1,600.00

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    Description: The IRF9510 is a P-channel enhancement-mode MOSFET designed for efficient power management in a variety of applications. It is particularly suited for battery-operated circuits and other applications where low power consumption and fast switching speeds are essential. The MOSFET offers low on-resistance and can handle moderate currents with minimal gate voltage. Key Features:
    • P-channel enhancement-mode power MOSFET
    • Low on-resistance for high efficiency
    • Fast switching speed
    • Low gate drive voltage
    • High current handling capability
    • Rugged and reliable design
    • RoHS compliant
    Technical Specifications:
    • Drain-Source Voltage (V_DS): -100V
    • Continuous Drain Current (I_D): -4.5A
    • Pulsed Drain Current (I_DM): -18A
    • Gate-Source Voltage (V_GS): ±20V
    • On-Resistance (R_DS(on)): 1.2Ω (max) at V_GS = -10V, I_D = -2.8A
    • Total Gate Charge (Q_g): 30nC (typical)
    • Gate Charge at 10V (Q_gs): 7nC (typical)
    • Package Type: TO-220
    Applications:
    • Power management in battery-operated devices
    • DC-DC converters
    • Switching regulators
    • Motor control circuits
    • Audio amplifiers
    Datasheet: For detailed technical information, refer to the IRF9510 P-Channel MOSFET datasheet.
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